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MTA65N20J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=11A VGS=4.5V, ID=5A 200V 24A 74mΩ 74mΩ Equivalent Circuit MTA65N20J3 Outline TO-252(DPAK) G：Gate S：Source D：Drain G D S Ordering Information Device MTA65N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compou.

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Datasheet Details

Part number MTA65N20J3
Manufacturer Cystech Electonics
File Size 313.62 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA65N20J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET Spec. No. : C866J3 Issued Date : 2012.07.05 Revised Date : 2013.12.30 Page No. : 1/9 MTA65N20J3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package BVDSS ID RDSON(TYP) VGS=10V, ID=11A VGS=4.