MTB013N10RE3 - N-Channel Enhancement Mode Power MOSFET

Product Overview

Cystech Electonics

Part number	MTB013N10RE3
Manufacturer	Cystech Electonics
File Size	347.15 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB013N10RE3 Datasheet
Additional preview pages of the MTB013N10RE3 datasheet.

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ) Symbol MTB013N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB013N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/bo.

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Published: Dec 4, 2016 |