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Cystech Electonics

MTB015N10QQ8 Datasheet Preview

MTB015N10QQ8 Datasheet

N-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB015N10QQ8
Spec. No. : C141Q8
Issued Date : 2015.10.13
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
ID @ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=8A
100V
10A
12.2A
12.6 mΩ(typ)
17.4mΩ(typ)
Symbol
MTB015N10QQ8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
Ordering Information
Device
MTB015N10QQ8-0-T3-G
Package
SOP-8
(RoHS compliant & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB015N10QQ8
CYStek Product Specification




Cystech Electonics

MTB015N10QQ8 Datasheet Preview

MTB015N10QQ8 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C141Q8
Issued Date : 2015.10.13
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=5mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25 °C
Total Power Dissipation
TC=100 °C
TA=25 °C
TA=70 °C
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. 100% tested by conditions of L=2mH, IAS=10A, VGS=10V, VDD=25V
*3. Duty cycle 1%
Limits
100
±20
12.2
7.7
10
8
40 *1
10
250 *2
1.6 *3
5.0
2.0
3.1
2.0
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-c
Rth,j-a
25
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
100 -
1.0 -
- 19
--
--
--
- 12.6
- 17.4
-
2.5
-
±100
1
10
17
24
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=10A
nA VGS=±20V
μA
VDS =100V, VGS =0V
VDS =100V, VGS =0V, Tj=85°C
mΩ
VGS =10V, ID=10A
VGS =4.5V, ID=8A
Dynamic
Qg (VGS=10V) *1, 2
Qg(VGS=4.5V) *1, 2
Qgs *1, 2
Qgd *1, 2
-
-
-
-
49.9
33.7
5.4
24.8
-
-
-
-
nC VDS=80V,ID=10A, VGS=10V
MTB015N10QQ8
CYStek Product Specification


Part Number MTB015N10QQ8
Description N-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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