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MTB015N10QH8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 100 V 39 A 8.8A 12 mΩ 16 mΩ Symbol MTB015N10QH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTB015N10QH8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green c.

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Datasheet Details

Part number MTB015N10QH8
Manufacturer Cystech Electonics
File Size 411.20 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB015N10QH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C141H8 Issued Date : 2015.10.13 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=15A RDSON(typ)@VGS=4.5V, ID=10A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 100 V 39 A 8.