• Part: MTB015N10QQ8
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 456.98 KB
Download MTB015N10QQ8 Datasheet PDF
Cystech Electonics
MTB015N10QQ8
MTB015N10QQ8 is N-Channel Enhancement Mode MOSFET manufactured by Cystech Electonics.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Repetitive Avalanche Rated - Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 12.2A 12.6 mΩ(typ) 17.4mΩ(typ) Symbol Outline Pin 1 SOP-8 G:Gate D:Drain S:Source Ordering Information Device MTB015N10QQ8-0-T3-G Package SOP-8 (Ro HS pliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C141Q8 Issued Date : 2015.10.13 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=5m H, ID=10A,...