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MTB015N10QQ8 - N-Channel Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 12.2A 12.6 mΩ(typ) 17.4mΩ(typ) Symbol MTB015N10QQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB015N10QQ8-0-T3-G Package SOP-8 (RoHS compliant & Halogen-free package) Shipp.

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Datasheet Details

Part number MTB015N10QQ8
Manufacturer Cystech Electonics
File Size 456.98 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB015N10QQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB015N10QQ8 Spec. No. : C141Q8 Issued Date : 2015.10.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 12.2A 12.6 mΩ(typ) 17.