• Part: MTB015N10RI3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech Electronics
  • Size: 302.34 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N10RI3 BVDSS ID@ VGS=10V, TC=25°C 100V 46A RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ) Features - Simple Drive Requirement - Repetitive Avalanche Rated - Fast Switching Characteristic - RoHS pliant package & Halogen-free package Symbol Outline TO-251S G:Gate D:Drain S:Source Ordering Information Device MTB015N10RI3-0-UA-G Package TO-251S (RoHS pliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS pliant products, G for RoHS...