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MTB015N10RI3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • RoHS compliant package & Halogen-free package Symbol MTB015N10RI3 Outline TO-251S G:Gate D:Drain S:Source GDS Ordering Information Device MTB015N10RI3-0-UA-G Package TO-251S (RoHS compliant and halogen-free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing s.

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Datasheet Details

Part number MTB015N10RI3
Manufacturer CYStech Electronics
File Size 302.34 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB015N10RI3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N10RI3 BVDSS ID@ VGS=10V, TC=25°C 100V 46A RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.