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Cystech Electonics

MTB020N03E3 Datasheet Preview

MTB020N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB020N03E3
BVDSS
ID@VGS=10V, TC=25°C
Features
RDS(ON)@VGS=10V, ID=20A
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
30V
34A
18mΩ (typ)
Symbol
MTB020N03E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB020N03E3-0-UB-X
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB020N03E3
CYStek Product Specification




Cystech Electonics

MTB020N03E3 Datasheet Preview

MTB020N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=125°C
ID
Pulsed Drain Current
(Note 1)
IDM
Avalanche Current @L=0.5mH
IAS
Avalanche Energy @ L=5mH, ID=6A, VDD=30V (Note 2)
EAS
Repetitive Avalanche Energy@ L=0.05mH
EAR
Total Power Dissipation (TC=25)
Total Power Dissipation (TC=100)
Total Power Dissipation (TA=25)
PD
Total Power Dissipation (TA=100)
Operating Junction and Storage Temperature
Tj, Tstg
Limits
30
±20
34
21.5
136
13
90
7
68
27
2
0.8
-55~+150
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature
2. 100% tested by conditions of L=1mH, IAS=5A, VGS=10V, VDD=15V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
2.2
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
BVDSS/Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
30
-
1
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
0.02 - V/°C Reference to 25°C, ID=250μA
- 2.5 V VDS = VGS, ID=250μA
14 -
S VDS =5V, ID=10A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=125°C
18
25
23.5
35
mΩ
VGS =10V, ID=20A
VGS =4.5V, ID=20A
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
- 13.2 -
- 2.5 -
- 2.3 -
-7-
- 17 -
- 29.8 -
-7-
nC ID=20A, VDS=15V, VGS=10V
ns VDS=15V, ID=1A, VGS=10V, RG=6
MTB020N03E3
CYStek Product Specification


Part Number MTB020N03E3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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