MTB020N03E3 Description
CYStech Electronics Corp. 2016.06.23 Revised Date : 1/8 N-Channel Enhancement Mode Power MOSFET MTB020N03E3 BVDSS ID@VGS=10V, TC=25°C.
MTB020N03E3 Key Features
- Low Gate Charge
- Simple Drive Requirement
- Repetitive Avalanche Rated
- Fast Switching Characteristic
- Pb-free lead plating and RoHS pliant package