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MTB020N03E3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • RDS(ON)@VGS=10V, ID=20A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N03E3-0-UB-X Package Shipping TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for.

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Datasheet preview – MTB020N03E3

Datasheet Details

Part number MTB020N03E3
Manufacturer Cystech Electonics
File Size 318.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03E3 Datasheet
Additional preview pages of the MTB020N03E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No.
Published: |