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Cystech Electonics

MTB020N03KQ8 Datasheet Preview

MTB020N03KQ8 Datasheet

N-Channel Enhancement Mode MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB020N03KQ8
Spec. No. : C143Q8
Issued Date : 2015.11.13
Revised Date :
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Repetitive Avalanche Rated
Pb-free & Halogen-free package
ESD protected gate
BVDSS
ID
RDS(ON)@VGS=10V, ID=9A
RDS(ON)@VGS=4.5V, ID=7A
30V
10.2A
12.8 mΩ(typ)
17.4 mΩ(typ)
Symbol
MTB020N03KQ8
Outline
Pin 1
SOP-8
GGate DDrain SSource
Ordering Information
Device
MTB020N03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KQ8
CYStek Product Specification




Cystech Electonics

MTB020N03KQ8 Datasheet Preview

MTB020N03KQ8 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C143Q8
Issued Date : 2015.11.13
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 °C
TA=100 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
10.2
6.5
40 *1
10
15
1.5 *2
3.1
1.2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-c
Rth,j-a
25
40
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
12.8
17.4
12
6.9
1.8
3.4
450
79
60
8.8
-
2.5
-
±10
1
10
17
23
-
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =5V, ID=8A
VGS=±20V
μA VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=85°C
mΩ
VGS =10V, ID=9A
VGS =4.5V, ID=7A
nC ID=9A, VDS=15V, VGS=10V
pF VGS=0V, VDS=15V, f=1MHz
Ω f=1MHz
MTB020N03KQ8
CYStek Product Specification


Part Number MTB020N03KQ8
Description N-Channel Enhancement Mode MOSFET
Maker Cystech Electonics
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