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MTB020N03KQ8 - N-Channel Enhancement Mode MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package.
  • ESD protected gate BVDSS ID RDS(ON)@VGS=10V, ID=9A RDS(ON)@VGS=4.5V, ID=7A 30V 10.2A 12.8 mΩ(typ) 17.4 mΩ(typ) Symbol MTB020N03KQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB020N03KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 p.

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Datasheet Details

Part number MTB020N03KQ8
Manufacturer Cystech Electonics
File Size 391.01 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTB020N03KQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec. No. : C143Q8 Issued Date : 2015.11.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package • ESD protected gate BVDSS ID RDS(ON)@VGS=10V, ID=9A RDS(ON)@VGS=4.5V, ID=7A 30V 10.2A 12.8 mΩ(typ) 17.