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MTB020N03KV8 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD protected gate.
  • Pb-free lead plating package Equivalent Circuit MTB020N03KV8 Outline DFN3×3 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB020N03KV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tap.

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Datasheet Details

Part number MTB020N03KV8
Manufacturer Cystech Electonics
File Size 450.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03KV8 Datasheet
Additional preview pages of the MTB020N03KV8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 12.4mΩ 16.
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