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Cystech Electonics

MTB150N10N3 Datasheet Preview

MTB150N10N3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
100V N-Channel Enhancement Mode MOSFET
MTB150N10N3
Spec. No. : C731N3
Issued Date : 2016.12.12
Revised Date :
Page No. : 1/9
Features
Simple drive requirement
Small package outline
Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
RDSON@VGS=10V, ID=1.6A
RDSON@VGS=4.5V, ID=1.3A
100V
1.9A
128mΩ(typ)
135mΩ(typ)
Symbol
MTB150N10N3
Outline
SOT-23
D
GGate SSource DDrain
S
G
Ordering Information
Device
Package
Shipping
MTB150N10N3-0-T1-G
SOT-23
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB150N10N3
CYStek Product Specification




Cystech Electonics

MTB150N10N3 Datasheet Preview

MTB150N10N3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C731N3
Issued Date : 2016.12.12
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25(Note 3)
Maximum Power Dissipation@ TA=70(Note 3)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
100
±20
1.9
1.5
10
1.25
0.8
-55~+150
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width300μs, duty cycle2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
V
A
W
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
100
50
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
100
1.0
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
- - ±10 nA VGS=±20V, VDS=0V
-
-
-
-
1
10
μA
VDS=100V, VGS=0V
VDS=100V, VGS=0V (Tj=85°C)
-
-
128
135
165
190
mΩ
ID=1.6A, VGS=10V
ID=1.3A, VGS=4.5V
- 3.9 -
S VDS=10V, ID=1A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
- 262 -
- 38 -
- 20 -
-8-
- 18.6 -
- 19.4 -
- 17.6 -
pF VDS=25V, VGS=0V, f=1MHz
ns VDS=50V, ID=1A, VGS=4.5V, RG=6.8Ω
MTB150N10N3
CYStek Product Specification


Part Number MTB150N10N3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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