• Part: MTB150N10J3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 382.15 KB
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Datasheet Summary

CYStech Electronics Corp. Spec. No. : C868J3 Issued Date : 2016.06.06 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS ID @ VGS=10V, TA=25°C 100V 2.3A ID @ VGS=10V, TC=25°C 7A RDSON(TYP) VGS=10V, ID=10A 163 mΩ VGS=4.5V, ID=10A 178 mΩ Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Repetitive Avalanche Rated - Pb-free lead plating and halogen-free package Equivalent Circuit Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB150N10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment...