MTB150N10N3
Overview
- Simple drive requirement
- Small package outline
- Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.6A RDSON@VGS=4.5V, ID=1.3A 100V 1.9A 128mΩ(typ) 135mΩ(typ) Symbol
| Part | MTB150N10N3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | Cystech Electonics |
| Size | 343.18 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |