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MTB150N10N3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Small package outline.
  • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.6A RDSON@VGS=4.5V, ID=1.3A 100V 1.9A 128mΩ(typ) 135mΩ(typ) Symbol MTB150N10N3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTB150N10N3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant.

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Datasheet Details

Part number MTB150N10N3
Manufacturer Cystech Electonics
File Size 343.18 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB150N10N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. 100V N-Channel Enhancement Mode MOSFET MTB150N10N3 Spec. No. : C731N3 Issued Date : 2016.12.12 Revised Date : Page No. : 1/9 Features • Simple drive requirement • Small package outline • Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V RDSON@VGS=10V, ID=1.6A RDSON@VGS=4.5V, ID=1.3A 100V 1.