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Cystech Electonics

MTB20N03Q8 Datasheet Preview

MTB20N03Q8 Datasheet

N-Channel MOSFET

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CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2017.11.27
Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03Q8
BVDSS
ID@ TA=25C, VGS=10V
RDS(ON)@VGS=10V, ID=9A
RDS(ON)@VGS=4.5V, ID=7A
30V
10.2A
13.6 mΩ(typ)
22.3 mΩ(typ)
Description
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free & Halogen-free package
Symbol
MTB20N03Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB20N03Q8
CYStek Product Specification




Cystech Electonics

MTB20N03Q8 Datasheet Preview

MTB20N03Q8 Datasheet

N-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date : 2017.11.27
Page No. : 2/9
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=100C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 C
TA=100 C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
10.2
6.5
40 *1
10
5
1.6 *2
3.1
1.2
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Rth,j-c
Rth,j-a
25
40
C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
Rg
30
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.7
9
-
-
-
13.6
22.3
11
6.4
1.9
3
715
76
66
2.2
-
3.0
-
±100
1
25
18
29
-
-
-
-
-
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =5V, ID=8A
nA VGS=±20V, VDS=0V
μA VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125C
mΩ
VGS =10V, ID=9A
VGS =4.5V, ID=7A
nC ID=9A, VDS=15V, VGS=10V
pF VGS=0V, VDS=15V, f=1MHz
Ω VGS=15mV, VDS=0V, f=1MHz
MTB20N03Q8
CYStek Product Specification


Part Number MTB20N03Q8
Description N-Channel MOSFET
Maker Cystech Electonics
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