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Cystech Electonics

MTB2D0N04F3 Datasheet Preview

MTB2D0N04F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB2D0N04F3
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
40V
84A
17.3A
2.2 mΩ(typ)
2.5 mΩ(typ)
Symbol
MTB2D0N04F3
Outline
TO-263
GGate DDrain SSource
G DS
Ordering Information
Device
Package
Shipping
MTB2D0N04F3-0-T7-X
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB2D0N04F3
CYStek Product Specification




Cystech Electonics

MTB2D0N04F3 Datasheet Preview

MTB2D0N04F3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C072F3
Issued Date : 2016.01.18
Revised Date : 2016.03.04
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V (silicon limit) (Note 5)
Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=25°C, VGS=10V (package limit) (Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=50 Amps, VDD=30V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C
TA=25°C
(Note 1)
(Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
TL
TPKG
Tj, Tstg
Limits
40
±20
146
103
84
17.3
13.8
584
50
1250
16
166
83
2.1
1.3
300
260
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
0.9
60
Unit
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=30V,
ID=20A, L=1mH, VGS=10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB2D0N04F3
CYStek Product Specification


Part Number MTB2D0N04F3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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