Datasheet Summary
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C998E3 Issued Date : 2016.08.01 Revised Date : Page No. : 1/ 8
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V 111A(Si limit)
66A(PKG limit) 17.5A 3.5 mΩ(typ) 4.6 mΩ(typ)
Symbol
Outline
TO-220
G：Gate D：Drain S：Source
Ordering Information
Device MTB2D5N03BE3-0-UB-X
Package
TO-220 (RoHS pliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly...