Datasheet4U Logo Datasheet4U.com

MTB4D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • RDSON(typ)@VGS=4.5V, ID=20A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 30 V 66 A 14.8A 3.9 mΩ 5.5 mΩ Symbol MTB4D0N03BH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTB4D0N03BH8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

📥 Download Datasheet

Datasheet Details

Part number MTB4D0N03BH8
Manufacturer Cystech Electonics
File Size 422.88 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB4D0N03BH8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB4D0N03BQ8 N-Channel Enhancement Mode Power MOSFET CYStech
MTB4D0N03ATV8 N-Channel Enhancement Mode Power MOSFET CYStech
MTB40N10E TMOS POWER FET Motorola
MTB4N80E TMOS POWER FET Motorola
MTB4N80E1 TMOS POWER FET Motorola

Other Datasheets by Cystech Electonics

Part Number Description
MTB4D0N03BJ3 N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BV8 N-Channel Logic Level Enhancement Mode Power MOSFET
MTB011N10RQ8 N-Channel Enhancement Mode Power MOSFET
MTB012N04J3 N-Channel Enhancement Mode Power MOSFET
MTB012N04Q8 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Spec. No. : C092H8 Issued Date : 2015.10.08 Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03BH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=30A Features RDSON(typ)@VGS=4.5V, ID=20A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 30 V 66 A 14.8A 3.9 mΩ 5.