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Cystech Electonics

MTB4D0N03BH8 Datasheet Preview

MTB4D0N03BH8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C092H8
Issued Date : 2015.10.08
Revised Date :
Page No. : 1/10
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=30A
Features
RDSON(typ)@VGS=4.5V, ID=20A
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
30 V
66 A
14.8A
3.9 mΩ
5.5 mΩ
Symbol
MTB4D0N03BH8
Outline
Pin 1
DFN5×6
GGate
DDrain
SSource
Ordering Information
Device
Package
Shipping
MTB4D0N03BH8-0-T6-G
DFN5×6
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03BH8
CYStek Product Specification




Cystech Electonics

MTB4D0N03BH8 Datasheet Preview

MTB4D0N03BH8 Datasheet

N-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C092H8
Issued Date : 2015.10.08
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=40A, VDD=15V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Limits
30
±20
66
41.7
14.8 *3
11.8 *3
160 *1
40
80 *4
5 *2
50
20
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
2.5
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
4. 100% tested by conditions of L=0.5mH, IAS=15A, VGS=10V, VDD=15V
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30 -
1.0 -
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
- 25 - S VDS =5V, ID=24A
- - ±100 nA VGS=±20V
-
-
-
-
1
25
μA
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
- 3.9 5.2 mΩ VGS =10V, ID=30A
- 5.5 7.5 mΩ VGS =4.5V, ID=20A
Dynamic
Ciss
Coss
Crss
- 1446
-
- 274 - pF VGS=0V, VDS=15V, f=1MHz
- 194
-
MTB4D0N03BH8
CYStek Product Specification


Part Number MTB4D0N03BH8
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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