MTB4D0N03BJ3 - N-Channel Logic Level Enhancement Mode Power MOSFET

Cystech Electonics

Key Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=20A VGS=4.5V, ID=10A 30V 15A 56A 3.9mΩ 5.0mΩ Equivalent Circuit MTB4D0N03BJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB4D0N03BJ3-0-T3-G Package TO-252 (Pb-free lead plating and h.

MTB4D0N03BJ3 n-channel logic level enhancement mode power mosfet by Cystech Electonics - Datasheet Preview

Datasheet Details

Part number	MTB4D0N03BJ3
Manufacturer	Cystech Electonics
File Size	376.30 KB
Description	N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet	MTB4D0N03BJ3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Spec. No. : C092J3 Issued Date : 2015.10.23 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03BJ3 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V, TA=25°C ID @ VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=20A VGS=4.5V, ID=10A 30V 15A 56A 3.9mΩ 5.