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MTB4D0N03BQ8 - N-Channel Enhancement Mode Power MOSFET

General Description

The MTB4D0N03BQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package Symbol MTB4D0N03BQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTB4D0N03BQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C092Q8 Issued Date : 2015.10.05 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-.

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Datasheet Details

Part number MTB4D0N03BQ8
Manufacturer CYStech
File Size 424.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB4D0N03BQ8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB4D0N03BQ8 Spec. No. : C092Q8 Issued Date : 2015.10.05 Revised Date : Page No. : 1/9 BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=18A RDS(ON)@VGS=4.5V, ID=10A 30V 17.5A 22.0A 4.2 mΩ(typ) 6.0mΩ(typ) Description The MTB4D0N03BQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.