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MTB4D0N03BH8 - N-Channel Logic Level Enhancement Mode Power MOSFET

Datasheet Summary

Features

  • RDSON(typ)@VGS=4.5V, ID=20A.
  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and Halogen-free package 30 V 66 A 14.8A 3.9 mΩ 5.5 mΩ Symbol MTB4D0N03BH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device Package Shipping MTB4D0N03BH8-0-T6-G DFN5×6 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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Datasheet Details

Part number MTB4D0N03BH8
Manufacturer Cystech Electonics
File Size 422.88 KB
Description N-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTB4D0N03BH8 Datasheet
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CYStech Electronics Corp. Spec. No. : C092H8 Issued Date : 2015.10.08 Revised Date : Page No. : 1/10 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03BH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=30A Features RDSON(typ)@VGS=4.5V, ID=20A • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 30 V 66 A 14.8A 3.9 mΩ 5.
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