MTB4D0N03ATV8 - N-Channel Enhancement Mode Power MOSFET

CYStech

Key Features

Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Dynamic dv/dt rating.
Repetitive Avalanche Rated.
Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=4.5V, ID=12A 30V 15A 4.7mΩ 6.7mΩ Equivalent Circuit MTB4D0N03ATV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTB4D0N03ATV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 p.

MTB4D0N03ATV8 n-channel enhancement mode power mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTB4D0N03ATV8
Manufacturer	CYStech
File Size	541.72 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB4D0N03ATV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATV8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Dynamic dv/dt rating  Repetitive Avalanche Rated  Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=4.5V, ID=12A 30V 15A 4.7mΩ 6.