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MTB90P06Q8 Datasheet Preview

MTB90P06Q8 Datasheet

P-Channel Logic Level Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C733Q8
Issued Date : 2011.03.30
Revised Date : 2012.03.01
Page No. : 1/9
P-Channel Logic Level Enhancement Mode Power MOSFET
MTB90P06Q8
BVDSS
ID
RDSON@VGS=-10V, ID=-5A
RDSON@VGS=-4.5V, ID=-3A
-60V
-5A
69 mΩ typ.
92 mΩ typ.
Description
The MTB90P06Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free and Halogen-free package
Equivalent Circuit
MTB90P06Q8
Outline
SOP-8
GGate
SSource
DDrain
MTB90P06Q8
CYStek Product Specification




Cystech Electonics

MTB90P06Q8 Datasheet Preview

MTB90P06Q8 Datasheet

P-Channel Logic Level Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C733Q8
Issued Date : 2011.03.30
Revised Date : 2012.03.01
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=100 °C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Power Dissipation
TA=25 °C
TA=100 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj ; Tstg
Limits
-60
±20
-5
-3.2
-20
-5
1.25
0.625
3
1.2
-55~+150
Note : 1.Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
A
mJ
W
W
°C
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON) (Note 1)
GFS (Note 1)
Dynamic
Ciss
Coss
Crss
td(ON) (Note 1&2)
tr (Note 1&2)
td(OFF) (Note 1&2)
tf (Note 1&2)
Qg (Note 1&2)
Qgs (Note 1&2)
Qgd (Note 1&2)
Rg
-60
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- - V VGS=0, ID=-250μA
-1.8 -3 V VDS=VGS, ID=-250μA
- ±100 nA VGS=±20V, VDS=0
- -1 μA VDS=-48V, VGS=0
- -25 μA VDS=-40V, VGS=0, Tj=125°C
69
92
90
120
mΩ
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
8 - S VDS=-5V, ID=-5A
945 -
53 - pF VDS=-25V, VGS=0, f=1MHz
37 -
6-
9
20
-
-
ns
VDS=-10V, ID=-1A, VGS=-10V,
RG=6Ω
4-
14 -
3.2 - nC VDS=-30V, ID=-5A, VGS=-10V,
5.4 -
6.8 - Ω VGS=15mV, VDS=0, f=1MHz
MTB90P06Q8
CYStek Product Specification


Part Number MTB90P06Q8
Description P-Channel Logic Level Enhancement Mode Power MOSFET
Maker Cystech Electonics
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