• Part: MTBA6C12H8
  • Description: N- and P-channel enhancement mode power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 930.78 KB
Download MTBA6C12H8 Datasheet PDF
Cystech Electonics
MTBA6C12H8
MTBA6C12H8 is N- and P-channel enhancement mode power MOSFET manufactured by Cystech Electonics.
Features - Simple drive requirement - Low on-resistance - Fast switching speed - Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH -120V -1.9A -5.4A 255mΩ 285mΩ Equivalent Circuit Outline Pin 1 DFN5×6 G:Gate S:Source D:Drain Ordering Information Device MTBA6C12H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating & halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage TA=25 C, VGS=10V (-10V) Continuous Drain Current TA=70 C, VGS=10V (-10V) TC=25 C, VGS=10V (-10V) TC=100 C, VGS=10V (-10V) Pulsed Drain Current (Note 1 & 2) TA=25 C Power Dissipation TA=70 C TC=25...