MTBA6C12H8
MTBA6C12H8 is N- and P-channel enhancement mode power MOSFET manufactured by Cystech Electonics.
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH 120V 2.2A
6.3A 186mΩ 196mΩ
P-CH -120V -1.9A
-5.4A 255mΩ 285mΩ
Equivalent Circuit
Outline
Pin 1
DFN5×6
G:Gate S:Source D:Drain
Ordering Information
Device MTBA6C12H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 C, VGS=10V (-10V)
Continuous Drain Current TA=70 C, VGS=10V (-10V) TC=25 C, VGS=10V (-10V)
TC=100 C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 C
Power Dissipation
TA=70 C TC=25...