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MTBA6C12H8 - N- and P-channel enhancement mode power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH -120V -1.9A -5.4A 255mΩ 285mΩ Equivalent Circuit MTBA6C12H8 Outline Pin 1 DFN5×6 G：Gate S：Source D：Drain Ordering Information Device MTBA6C12H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating & h.

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Datasheet Details

Part number MTBA6C12H8
Manufacturer Cystech Electonics
File Size 930.78 KB
Description N- and P-channel enhancement mode power MOSFET
Datasheet download datasheet MTBA6C12H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTBA6C12H8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 120V 2.2A 6.3A 186mΩ 196mΩ P-CH -120V -1.9A -5.