900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTBA6C12H8 Datasheet Preview

MTBA6C12H8 Datasheet

N- and P-channel enhancement mode power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA6C12H8
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
120V
2.2A
6.3A
186mΩ
196mΩ
P-CH
-120V
-1.9A
-5.4A
255mΩ
285mΩ
Equivalent Circuit
MTBA6C12H8
Outline
Pin 1
DFN5×6
GGate SSource DDrain
Ordering Information
Device
MTBA6C12H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
MTBA6C12H8
CYStek Product Specification




Cystech Electonics

MTBA6C12H8 Datasheet Preview

MTBA6C12H8 Datasheet

N- and P-channel enhancement mode power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C973H8
Issued Date : 2016.07.06
Revised Date :
Page No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 C, VGS=10V (-10V)
Continuous Drain Current TA=70 C, VGS=10V (-10V)
TC=25 C, VGS=10V (-10V)
TC=100 C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 C
Power Dissipation
TA=70 C
TC=25 C
TC=100 C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
IDSM
ID
IDM
PDSM
PD
Tj; Tstg
Limits
N-channel P-channel
120 -120
±20 ±20
2.2 -1.9
1.8 -1.5
6.3 -5.4
4.0 -3.4
10 -8
2.5 (Note 3)
1.6 (Note 3)
21
8.4
-55~+150
Unit
V
A
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
6
50 (Note 3)
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board; 125C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
120
1.0
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=96V, VGS=0V
VDS=96V, VGS=0V, Tj=125C
186 235
ID=2A, VGS=10V
196 255 mID=1.5A, VGS=4.5V
*GFS
- 6.3 - S VDS=10V, ID=2A
Dynamic
Ciss - 263 -
Coss
- 39 - pF VDS=25V, VGS=0V, f=1MHz
Crss - 21 -
*td(ON) - 4.8 -
*tr
*td(OFF)
-
-
16
20.6
-
-
ns VDS=75V, ID=1A, VGS=10V, RG=6Ω
*tf - 17.6 -
MTBA6C12H8
CYStek Product Specification


Part Number MTBA6C12H8
Description N- and P-channel enhancement mode power MOSFET
Maker Cystech Electonics
PDF Download

MTBA6C12H8 Datasheet PDF






Similar Datasheet

1 MTBA6C12H8 N- and P-channel enhancement mode power MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy