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MTBH0N25J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package 250V 3.5A 1.0A 780mΩ 735mΩ Equivalent Circuit MTBH0N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTBH0N25J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec.

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Datasheet Details

Part number MTBH0N25J3
Manufacturer Cystech Electonics
File Size 376.19 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBH0N25J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTBH0N25J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package 250V 3.5A 1.