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Cystech Electonics

MTBH0N25J3 Datasheet Preview

MTBH0N25J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTBH0N25J3 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
250V
3.5A
1.0A
780mΩ
735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
GGate DDrain
SSource
G DS
Ordering Information
Device
Package
MTBH0N25J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Specification




Cystech Electonics

MTBH0N25J3 Datasheet Preview

MTBH0N25J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=3A, VDD=50V
Repetitive Avalanche Energy@ L=0.1mH
Total Power Dissipation @TC=25
(Note 1)
Total Power Dissipation @TC=100(Note 1)
Total Power Dissipation @TA=25
(Note 2)
Total Power Dissipation @TA=70
(Note 2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
(Note 1)
(Note 1)
(Note 2)
ID
(Note 2)
(Note 3)
(Note 4)
(Note 4)
(Note 3)
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 2/9
Limits
250
±20
3.5
2.5
1.0
0.8
8.5
4
9
3
30
15
2.5
1.6
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
RθJC
5
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 4)
RθJA
50 °C/W
110
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty
cycles to keep initial TJ=25°C.
4. 100% tested by conditions of L=2mH, IAS=2A, VGS=10V, VDD=50V
5. When mounted on the minimum pad size recommended (PCB mount), t10s.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTBH0N25J3
CYStek Product Specification


Part Number MTBH0N25J3
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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