900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Cystech Electonics

MTC5806V8 Datasheet Preview

MTC5806V8 Datasheet

N-&P-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC5806V8
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
N-CH
60V
4.3A
6.4A
37mΩ
42mΩ
P-CH
-60V
-3.3A
-4.6A
70mΩ
93mΩ
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC5806V8
Outline
DFN3×3
GGate SSource DDrain
Pin 1
Ordering Information
Device
MTC5806V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13reel
Product rank, zero for no rank products
Product name
MTC5806V8
CYStek Product Specification




Cystech Electonics

MTC5806V8 Datasheet Preview

MTC5806V8 Datasheet

N-&P-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 2/13
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
VGS
60
±20
-60
±20
Continuous Drain Current *2 TA=25 C, VGS=10V (-10V)
TA=70 C, VGS=10V (-10V)
IDSM
4.3
3.4
-3.3
-2.6
Continuous Drain Current
TC=25 C, VGS=10V (-10V)
ID
6.4
-4.6
TC=100 C, VGS=10V (-10V)
4.5 -3.3
Pulsed Drain Current * 3
IDM 20
-20
Total Power
Dissipation
TA=25°C, Single device operation
TA=70°C, Single device operation
TA=25°C, Single device value at dual operation
TA=70°C, Single device value at dual operation
PDSM
1.5 *2
0.96 *2
1.24 *2
0.79 *2
TC=25°C
TC=100°C
PD * 1
3.75
1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Unit
V
A
W
C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol
Rth,j-a
Rth,j-c
Value
84 *2
101 *2
40
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the users specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
60
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
10
μA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, Tj=70C
*RDS(ON)
-
-
37
42
58
60
m
VGS=10V, ID=4.3A
VGS=4.5V, ID=4A
*GFS
- 9.5 - S VDS=5V, ID=4.3A
MTC5806V8
CYStek Product Specification


Part Number MTC5806V8
Description N-&P-Channel MOSFET
Maker Cystech Electonics
PDF Download

MTC5806V8 Datasheet PDF






Similar Datasheet

1 MTC5806V8 N-&P-Channel MOSFET
Cystech Electonics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy