MTC5806V8 Datasheet Text
CYStech Electronics Corp.
Spec. No. : C407V8 Issued Date : 2014.11.10 Revised Date : 2016.10.11 age No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC5806V8
BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
N-CH 60V 4.3A
6.4A 37mΩ 42mΩ
P-CH -60V -3.3A
-4.6A 70mΩ 93mΩ
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC5806V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTC5806V8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel
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