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MTC3585G6 - N & P-Channel Enhancement Mode Power MOSFET

General Description

The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MTC3585G6 Outline TSOP-6 D1 S1 D2 G:Gate S:Source D:Drain G1 S2 G2 MTC3585G6 CYStek Product Specification Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=2.

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Datasheet Details

Part number MTC3585G6
Manufacturer Cystech Electonics
File Size 565.89 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3585G6 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr CYStech Electronics Corp. Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.