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MTC3585N6 - N & P-Channel Enhancement Mode Power MOSFET

General Description

The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free package Equivalent Circuit MTC3585N6 Outline SOT-26 D1 S1 D2 G:Gate S:Source D:Drain G1 S2 G2 MTC3585N6 CYStek Product Specification Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=2.

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Datasheet Details

Part number MTC3585N6
Manufacturer Cystech Electonics
File Size 892.20 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTC3585N6 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr CYStech Electronics Corp. Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOT-26 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.