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1N60P Datasheet Preview

1N60P Datasheet

GERMANIUM DIODES

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1N60, 1N60P
Features
· Metal silicon junction, majority carrier conduction
· High current capability, Low forward voltage drop
· Extremely low reverse current lR
· Ultra speed switching characteristics
· Small temperature coefficient of forward characteristics
· Satisfactory Wave detection efficiency
· For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
super high speed switching circuits, small current rectifier
Mechanical Data
· Case : DO-35 glass case
· Polarity : Color band denotes cathode end
· Weight : Approx. 0.13 gram
Absolute Ratings (Limiting Values)
Symbols
VRRM
lF
lFSM
TSTG/TJ
TL
Parameters
Zenerepetitive Peak Reverse Voltage
Forward Continuous Crrent
TA=25
Peak Forward Surge Current(t=1S)
Storage junction Temperature Range
Maximum Lead Temperature for soldering 10S at 4mm from Case
GERMANIUM DIODES
DO-35(GLASS)
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
Dimensions in inches and (millimeters)
Value
1N60
1N60P
40 45
30 50
150 500
-65 to+125
230
Units
Volts
mA
mA
Electrical characteristics
Symbols
Parameters
VF
lR
CJ
trr
R JA
Forward Voltage
Reverse Current
Junction Capacitance
Detection Effcienc(See diagram 4)
Revese Recovery time
Junction Amblent Thermal Resistance
Test Conditions
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
VI=3V f=30MHz CL=10pF RL=3.8k
IF=IR=1mA Irr=1mA RC=100
Min
Value
Typ.
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
60
400
Max.
0.5
0.5
1.0
1.0
0.5
1.0
1
Units
Volts
A
pF
ns
/W




DEC

1N60P Datasheet Preview

1N60P Datasheet

GERMANIUM DIODES

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES 1N60P
FIG.1-FORWARD CURRENT VERSUS FORWARD
VALTAGE(TYPICAL VALUES)
IF(mA)
500
450
400
350
300
250
200
150
100
50
0 0.2
0.4 0.6
0.8 1.0 VF(V)
FIG.2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE
IR(UA)
0.70
0.60
0.50
0.40
0.30
0.20
0.10
05
10 15 20 25 30 VR(V)
FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS
REVERSE APPLIED VOLTAGE
C(pF)
20
18
16
14
12
10
8
6
0 1 2 3 4 5 6 VR(V)
FIG.4-DETECTION EFFICIENCY MEASUREMENT
CIRCUIT
D.U.T.
Input:3VRMS
CL
10pF
output
RL
3.8kW


Part Number 1N60P
Description GERMANIUM DIODES
Maker DEC
Total Page 2 Pages
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