1N60P Datasheet | Specifications & PDF Download

www.DataSheet4U.com AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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1N60-DO35 / 1N60P-DO35 30-50mA Leaded Type Small Signal Diodes ■Features • Low current rectification and high speed switching. • Silicon epitaxial pla

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Silicon Schottky Barrier Diode FEATURES • Metal silicon junction, majority carrier conduction • Ideal for used in detection or for switching on the ra

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1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum

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1N60PW-1N60SW SCHOTTKY BARRIER DIODE Features High reliability Low forward voltage and reverse current Mechanical Data Case: SOD-123FL plastic

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Features  +LJKUHOLDELOLW\  /RZIRUZDUGYROWDJHDQGUHYHUVHFXUUHQW 1N60PW 6FKRWWN\%DUULHU'LRGH SOD-123 2 1 &DWKRGH $QRGH Marking Code :

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■Silicon Schottky Barrier Diode ■ Features ● Metal silicon junction, majority carrier conduction ● Ideal for used in detection or for switching on the

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Germanium Glass Diode Features • Germanium Glass Diode • RoHS Compliance Germanium Glass Diode 1N60/1N60P DO-7 Mechanical Data Case: Terminals: Pol

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SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a high voltage MOSFET and is des

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www.DataSheet4U.com AP01N60P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating

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UNISONIC TECHNOLOGIES CO., LTD 1N60P 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60P is a high voltage power MOSFET and is designed to h

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MCC
     omponents 20736 Marilla Street Chatsworth  # $ % # Features • High Reliability

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N60P TECHNICAL SPECIFICATIONS OF SMALL SINGAL SCHOTTKY DIODES FEATURES * Metal silicon junction,

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1N60-1N60P SMALL SIGNAL SCHOTTKY DIODES Features Fast switching for high efficiency Low reverse leakage High forward surge current capability

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Schottky Barrier Diodes P b Lead(Pb)-Free Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Recti

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1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity wh

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