AP01N60P Datasheet | Advanced Power Electronics Corp

The TO-220 package is universally preferred for all mercialindustrial applications. The device is suited for DC-DC ,DC-AC converters for tele, industrial and consumer environment. G Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Rating 600 ±30 1.6 1 6 39 0.31 Units V V A A A W W/ ℃ m J A m J ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 13 1.6 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Units ℃/W ℃/W 200705051-1/4 Data & specifications subject to change without notice AP01N60P .. Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1m A Min. 600 2 - Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 5 14 7 286 25 5 Max. Units 8 4 10 100 ±100 V V/℃ Ω V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1m A RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.8A VDS=VGS, ID=250u A VDS=50V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10Ω,VGS=10V RD=187.5Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain...