Datasheet Details
| Part number | AP01N60H-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 103.15 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP01N60H-HF Download (PDF) |
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| Part number | AP01N60H-HF |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 103.15 KB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Download | AP01N60H-HF Download (PDF) |
|
|
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The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP01N60J) is available for low-profile applications.
G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 +30 1.6 1 6 39 0.31 13 1.6 0.5 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ mJ A mJ ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 4 Value 3.2 62.5 110 Units ℃/W ℃/W ℃/W 1 201108243 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Downloaded from Elcodis.com electronic components distributor AP01N60H/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 3 3 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=50V, ID=0.8A VDS=600V, VGS=0V VGS=+30V, VDS=0V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10Ω,VGS=10V RD=187.5Ω VGS=0V VDS=25V f=1.0MHz Min.
AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 8Ω 1.
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|---|---|
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