1N60 Datasheet | Specifications & PDF Download

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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Empower The World InPower Product Lines Confidential Free Datasheet http://www.datasheet4u.com/ Discrete Power Products Empower The World IPS Bas

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600V N-Channel MOSFET General Features  Low ON Resistance  Low Gate Charge (typical 4.8nC)  Fast Switching  100% Avalanche Tested  RoHS Compliant

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Empower The World InPower Product Lines Confidential Free Datasheet http://www.datasheet4u.com/ Discrete Power Products Empower The World IPS Bas

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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MOSFET - Power, Single N-Channel, SUPERFET) V, FAST, TO247-3L 600 V, 41 mW, 57 A NTHL041N60S5H Description The SUPERFET V MOSFET FAST series helps m

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1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES ● Metal-on-silicon junctio

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NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro

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NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology

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MDF11N60 N-channel MOSFET 600V MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technolo

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IRFP21N60L, SiHFP21N60L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS =

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NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are Ro

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Philips Semiconductors Product specification PowerMOS transistor PHP1N60 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transis

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Philips Semiconductors Objective Specification PowerMOS transistor PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power tran

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N60

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Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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600V N-Channel MOSFETs PDL01N60 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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Aug 2006 PFU1N60 / PFD1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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June 2007 PFM1N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkab

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