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DG5N100 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG5N100 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG5N100 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG5N100
Manufacturer DGME
File Size 871.02 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG5N100-DGME.pdf
Additional preview pages of the DG5N100 datasheet.

DG5N100 Product details

Description

DG5N100N，， ，，，。 ，，。 DG5N100 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 1000 5.0 2.6 14 V A Ω pF Symbol Package 1 /

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