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DG630 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG630 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

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Official preview page of the DG630 N-CHANNEL ENHANCEMENT MODE MOSFET datasheet (DGME).

Datasheet Details

Part number DG630
Manufacturer DGME
File Size 741.47 KB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG630-DGME.pdf
Additional preview pages of the DG630 datasheet.

DG630 Product details

Description

DG630N，， ，，，。 ，，。 DG630 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 9.0 0.4 18 V A Ω pF Symbol Package 1 /8 AB

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