DG640 - N-CHANNEL ENHANCEMENT MODE MOSFET

The DG640 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	DG640
Manufacturer	DGME
File Size	744.49 KB
Description	N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	DG640-DGME.pdf
Additional preview pages of the DG640 datasheet.

DG640 Product details

Description

DG640N，，，，，。，，。 DG640 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Microelectronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 200 18 0.2 22 V A Ω pF Symbol Package 1 /8 ABS

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Published: Apr 12, 2017 |