The DG830 by DGME is a N-CHANNEL ENHANCEMENT MODE MOSFET. Below is the official datasheet preview.
| Part number | DG830 |
|---|---|
| Manufacturer | DGME |
| File Size | 720.60 KB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Datasheet |
 DG830-DGME.pdf
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DG830N，， ，，，。 ，，。 DG830 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 500 4.5 1.5 14 V A Ω pF Symbol Package 1 /8 A
