DMN10H170SFGQ mosfet equivalent, n-channel mosfet.
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A 2.7A
Description and Applications
This MOSFET is designed to meet the stringent req.
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supp.
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