DMN2053UFDBQ Datasheet DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) Max 35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V ID Max TA = +25°C 4.6A 4.

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Datasheet Details

Part number	DMN2053UFDBQ
Manufacturer	Diodes Incorporated
File Size	518.46 KB
Description	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Download	DMN2053UFDBQ Download (PDF)

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.

 Load switches  Power management functions  Portable power adaptors Mechanical Data  Package: U-DFN2020-6  Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Lead-Frame.

Key Features

PCB Footprint of 4mm2.
Low On-Resistance.
Low Input Capacitance.
Low Profile, 0.6mm Maximum Height.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen- and Antimony-Free. “Green” Device (Note 3).
The DMN2053UFDBQ is suitable for automotive.

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