• Part: DMN2310UTQ
  • Description: N-CHANNEL MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 600.59 KB
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Datasheet Summary

Product Summary BVDSS 20V RDS(on) 240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - DC-DC Converters - Load Switch - Power Management Functions SOT523 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - Ultra-Small Surface Mount Package - ESD Protected Gate - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen- and...