Datasheet Summary
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 30V
RDS(ON) MAX 30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID MAX TA = +25°C
5.3A
4.6A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- Load Switch
- DC-DC Converters
- Power Management Functions
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
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