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DMN3190LDWQ Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: DMN3190LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°C 1A 0.

General Description

and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  DC-DC Converters  Load Switch

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT363.
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.

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DMN3190LDWQ Distributor