* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* PPAP Capable
DMN3190LDWQ Datasheet (487.34 KB)
DMN3190LDWQ
487.34 KB
Dual n-channel mosfet.
DMN3190LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) (MAX) 190mΩ @ VGS = 10V 335mΩ @ VGS = 4.5V ID (MAX) TA = +25°.
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