• Part: DMN3350LDW
  • Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
  • Category: MOSFET
  • Manufacturer: Diodes Incorporated
  • Size: 686.49 KB
Download DMN3350LDW Datasheet PDF
Diodes Incorporated
DMN3350LDW
DMN3350LDW is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Features and Benefits - Dual N-Channel MOSFET - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. - Motor controls - Power-management functions - DC-DC converters Mechanical Data - Package: SOT363 - Package Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 - Weight: 0.027 grams (Approximate) SOT363 D1 D1 G2 S2 G1 ESD PROTECTED Top View Ordering Information (Note 4) S1 G1 D2 Top View Pin Out Gate Protection Diode S1 Q1 N-Channel Q2 N-Channel Notes:...