DMN3350LDW
DMN3350LDW is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Features and Benefits
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- Motor controls
- Power-management functions
- DC-DC converters
Mechanical Data
- Package: SOT363
- Package Material: Molded Plastic, "Green" Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections Indicator: See Diagram
- Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
- Weight: 0.027 grams (Approximate)
SOT363
D1
D1
G2
S2
G1
ESD PROTECTED Top View
Ordering Information (Note 4)
S1
G1
D2
Top View Pin Out
Gate Protection Diode
S1
Q1 N-Channel
Q2 N-Channel
Notes:...