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DMN3300UQ Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 30V RDS(ON) 0.15Ω @ VGS = 4.5V 0.2Ω @ VGS = 2.5V 0.25Ω @ VGS = 1.8V 0.3Ω @ VGS = 1.5V Package SOT23 ID TA = +25°C 2A 1.6A 1.4A 1.

General Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Applications • DC-DC Converters • Power Management Functions • Battery Operated Systems and Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

SOT23 DMN3300UQ N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Small Surface Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen- and Antimony-Free. “Green” Device (Note 3).
  • The DMN3300UQ is suitable for automotive.