Datasheet4U Logo Datasheet4U.com

DMN3350LDW - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Motor controls Power-management functions DC-DC converters Mechanical Data P

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

📥 Download Datasheet

Datasheet preview – DMN3350LDW

Datasheet Details

Part number DMN3350LDW
Manufacturer DIODES
File Size 686.49 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN3350LDW Datasheet
Additional preview pages of the DMN3350LDW datasheet.

📁 Similar Datasheet

Other Datasheets by DIODES

Full PDF Text Transcription

Click to expand full text
DMN3350LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID Max TA = +25°C 0.89A 0.67A Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.
Published: |