Datasheet Summary
Product Summary
BVDSS 30V
RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V
ID Max TA = +25°C
0.89A
0.67A
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DMN3350LDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://.diodes./quality/product-definitions/
Description and Applications
This MOSFET is...