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DMN3350LDWQ - DUAL N-CHANNEL MOSFET

Datasheet Summary

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for highefficiency power-management applications.

Motor controls Power-management functions DC-DC converters Mechanical Data

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN3350LDWQ is suitable for automotive.

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Datasheet preview – DMN3350LDWQ

Datasheet Details

Part number DMN3350LDWQ
Manufacturer DIODES
File Size 686.90 KB
Description DUAL N-CHANNEL MOSFET
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Full PDF Text Transcription

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Product Summary BVDSS 30V RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID Max TA = +25°C 0.89A 0.67A DMN3350LDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN3350LDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.
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