Datasheet Summary
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V
ID Max TA = +25°C
1.1A 0.8A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and...