Download DMN3401LDW Datasheet PDF
Diodes Incorporated
DMN3401LDW
DMN3401LDW is Dual N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Product Summary Device BVDSS N30V Channel RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID max TA = +25°C 0.8A 0.57A DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Dual N-Channel MOSFET - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. - Motor Control - Power Management Functions - DC-DC Converters Mechanical Data - Case: SOT363 - Case Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See Diagram - Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method...