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DMN3401LDW Datasheet Dual N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary Device BVDSS N30V Channel RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID max TA = +25°C 0.8A 0.

General Description

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

• Motor Control • Power Management Functions • DC-DC Converters Mechanical Data • Case: SOT363 • Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections Indicator: See Diagram • Terminals: Finish  Matte Tin Annealed over Copper Leadframe.

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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