DMN3401LV Datasheet | Diodes Incorporated

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID Max TA = +25°C 1.1A 0.8A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://.diodes./quality/product-definitions/ Applications - Motor controls - Power management functions - DC-DC converters - Backlighting Mechanical Data - Package: SOT563 - Package Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections: See Diagram - Terminals:...