Download DMN3401LDWQ Datasheet PDF
Diodes Incorporated
DMN3401LDWQ
DMN3401LDWQ is DUAL N-CHANNEL MOSFET manufactured by Diodes Incorporated.
Product Summary Device BVDSS NChannel 30V RDS(ON) max 0.4Ω @ VGS = 10V 0.7Ω @ VGS = 4.5V ID max TA = +25°C 0.8A 0.57A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: - Motor Control - Power Management Functions - DC-DC Converters SOT363 DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits - Dual N-Channel MOSFET - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2) - Halogen- and Antimony-Free. “Green” Device (Note 3) - The DMN3401LDWQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities. Mechanical Data - Case: SOT363 - Case Material: Molded Plastic, "Green" Molding pound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminal Connections Indicator: See...