Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) max
1.0 @ VGS = -4.5V 1.5 @ VGS = -2.5V 2.0 @ VGS = -1.8V 3.0 @ VGS = -1.5V
ID TA = +25°C
-600mA -500mA -400mA -250mA
Features
- Low On-Resistance
- Very Low Gate Threshold Voltage VGS(TH), -1.0V Max
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
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